Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers / Mykhailovska, K. V., Danko, V. A., Hudymenko, O. Y., Kladko, V. P., Indutnyi, I. Z., Shepeliavyi, P. Ye., Sopinskyi, M. V. (2018)
Ukrainian

English  Optoelectronics and Semiconductor Technique   /     Issue (2018, 53)

Mykhailovska K. V., Danko V. A., Hudymenko O. Y., Kladko V. P., Indutnyi I. Z., Shepeliavyi P. Ye., Sopinskyi M. V.
Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers


Cite:
Mykhailovska, K. V., Danko, V. A., Hudymenko, O. Y., Kladko, V. P., Indutnyi, I. Z., Shepeliavyi, P. Ye., Sopinskyi, M. V. (2018). Photoluminescence properties of silicon nanoparticlesinmultilayered (SiOx-SiOy)n structures with porousinsulatinglayers. Optoelectronics and Semiconductor Technique, 53, 169-180. http://jnas.nbuv.gov.ua/article/UJRN-0001074345 [In Ukrainian].

 

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