Monopolar photoconductivity of the inversion layer and "slow"-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting / Karas, N. I., Onishchenko, V. F. (2018)
Ukrainian

English  Optoelectronics and Semiconductor Technique   /     Issue (2018, 53)

Karas N. I., Onishchenko V. F.
Monopolar photoconductivity of the inversion layer and "slow"-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting


Cite:
Karas, N. I., Onishchenko, V. F. (2018). Monopolar photoconductivity of the inversion layer and "slow"-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting. Optoelectronics and Semiconductor Technique, 53, 268-272. http://jnas.nbuv.gov.ua/article/UJRN-0001074355 [In Russian].

 

Institute of Information Technologies of VNLU


+38 (044) 525-36-24
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209