Optoelectronics and Semiconductor Technique / Issue (2018, 53)
Karas N. I., Onishchenko V. F. Monopolar photoconductivity of the inversion layer and "slow"-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting
Cite: Karas, N. I., Onishchenko, V. F. (2018). Monopolar photoconductivity of the inversion layer and "slow"-surface levels in the structures of macroporous and monocrystalline silicon in condition of strong surface lighting. Optoelectronics and Semiconductor Technique, 53, 268-272. http://jnas.nbuv.gov.ua/article/UJRN-0001074355 [In Russian]. |