Interaction of chalcogenide As4Se96 films with electron beam when used as electronic resists / Bilanych, B. V., Shylenko, O., Latyshev, V. M., Feher, A., Bilanych, V. S., Rizak, V. M., Komanicky, V. (2020)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001127980
Ukrainian Journal of Physics   А - 2018 /  Issue (2020, Т. 65, № 3)
Bilanych B. V., Shylenko O., Latyshev V. M., Feher A., Bilanych V. S., Rizak V. M., Komanicky V.
Interaction of chalcogenide As4Se96 films with electron beam when used as electronic resists
Cite:
Bilanych, B. V., Shylenko, O., Latyshev, V. M., Feher, A., Bilanych, V. S., Rizak, V. M., Komanicky, V. (2020). Interaction of chalcogenide As4Se96 films with electron beam when used as electronic resists. Ukrainian Journal of Physics, 65 (3), 245-251. http://jnas.nbuv.gov.ua/article/UJRN-0001127980 | |
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