Investigation of photodiode formation processes in insb by using beryllium ion implantation / Holtvianskyi, Yu. V., Hudymenko, O. Y., Dubikovskyi, O. V., Liubchenko, O. I., Oberemok, O. S., Sabov, T. M., Sapon, S. V., Chunikhina, K. I. (2017)
Ukrainian

English  Optoelectronics and Semiconductor Technique   /     Issue (2017, 52)

Holtvianskyi Yu. V., Hudymenko O. Y., Dubikovskyi O. V., Liubchenko O. I., Oberemok O. S., Sabov T. M., Sapon S. V., Chunikhina K. I.
Investigation of photodiode formation processes in insb by using beryllium ion implantation


Cite:
Holtvianskyi, Yu. V., Hudymenko, O. Y., Dubikovskyi, O. V., Liubchenko, O. I., Oberemok, O. S., Sabov, T. M., Sapon, S. V., Chunikhina, K. I. (2017). Investigation of photodiode formation processes in insb by using beryllium ion implantation. Optoelectronics and Semiconductor Technique, 52, 140-149. http://jnas.nbuv.gov.ua/article/UJRN-0001138339 [In Ukrainian].

 

Institute of Information Technologies of VNLU


+38 (044) 525-36-24
Ukraine, 03039, Kyiv, Holosiivskyi Ave, 3, room 209