Оптоелектроніка та напівпровідникова техніка. 2017 (52)

Оптоелектроніка та напівпровідникова техніка. 2017 (52)

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Optoelectronics and Semiconductor Technique
2017. Issue 52

Contents.
Trotsenko. InSb photodiodes (Review. Part III).
State-of-the art and problems in developing sensor elements of devices based on surface plasmon resonance phenomenon (Review).
Influence of microwave radiation treatment on photoluminescent properties of II-VI compounds (Review).
High-efficient voluminous led modules in super-high-power lamps for domestic and industrial applications.
Peculiarities of preparation of CdTe p-n junctions and carrier transport in them.
nvestigation of the sensitivity inherent to sensor Au chips with nanostructured surface.
The influence of the periodic relief of the silicon substrate on polarization of photoluminescence observed in nc-Si–SiOx nanostructures.
nvestigations of near dislocation clusters of point defects in CdZnTe crystals by using the Hall method under the ultrasound loading the crystals.
Calculation of photoconductivity spectra in silicon with surfaces structured with macropores.
Experimental evidence of invariability in the shape of n‑Ge isoenergetic ellipsoids influenced by strong uniaxial elastic strains.
"Slow" surface levels and relaxation of photoconductivity in the structures of macroporous silicon in the violet range of the optical spectrum.
Investigation of photodiode formation processes in insb by using beryllium ion implantation.
In memory of Academician of NAS of Ukraine S. V. Svechnikov.

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