Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures / Savelyev, A. P., Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V. (2021)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001221068
Low Temperature Physics   А - 2019 /  Issue (2021, Т. 47, Вип. 1)
Savelyev A. P., Arapov Yu. G., Gudina S. V., Neverov V. N., Podgornykh S. M., Shelushinina N. G., Yakunin M. V.
Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures
Cite:
Savelyev, A. P., Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V. (2021). Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures. Low Temperature Physics, 47 (1), 18-23. http://jnas.nbuv.gov.ua/article/UJRN-0001221068 | |
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