Formation of β-SiC on por-Si/mono-Si surface according to Stranski - Krastanow mechanism / Suchikova, Y. O., Kovachov, S. S., Bardus, I. O., Lazarenko, A. S., Bohdanov, I. T. (2022)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001377813
Chemistry, physics and technology of surface  А - 2022 /  Issue (2022, Т. 13, № 4)
Suchikova Y. O., Kovachov S. S., Bardus I. O., Lazarenko A. S., Bohdanov I. T.
Formation of β-SiC on por-Si/mono-Si surface according to Stranski - Krastanow mechanism
Cite:
Suchikova, Y. O., Kovachov, S. S., Bardus, I. O., Lazarenko, A. S., Bohdanov, I. T. (2022). Formation of β-SiC on por-Si/mono-Si surface according to Stranski - Krastanow mechanism. Chemistry, physics and technology of surface, 13 (4), 447-454. http://jnas.nbuv.gov.ua/article/UJRN-0001377813 | |
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