Recombination and trapping of excess carriers in n-InSb / Tetyorkin V. V., Tkachuk A. I., Lutsyshyn I. G. (2024)
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web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0001470103
  Ukrainian Journal of Physics      А - 2018  /     Issue (2024, Т. 69, № 1)

Tetyorkin V. V., Tkachuk A. I., Lutsyshyn I. G.
Recombination and trapping of excess carriers in n-InSb

Cite:
Tetyorkin, V. V., Tkachuk, A. I., Lutsyshyn, I. G. (2024). Ukrainian Journal of Physics, 69 (1), 45-52 http://jnas.nbuv.gov.ua/article/UJRN-0001470103

 

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