Фізична інженерія поверхні. 2015, 13 (2)

ARCHIVE (All issues)

Physical surface engineering
2015. Issue 13 (2)

Mechanism of photocurrent amplification in injection photodiodes based on a photosensitive polycrystalline CdS film.
Photoelectric phenomena in the hyperfine (3-20 μm) gap gas discharge with a semiconductor electrode.
Investigation of photoelectric and photographic characteristics of a semiconductor photographic system of ionization type.
The use of powder cathodes for the deposition of Ti-Si-N coatings from a filtered vacuum arc plasma.
The model of clusters formation on the surface of semiconductor crystals of the A3B5 group.
Room-temperature ultraviolet laser emission from ZnO hexagonal microprisms and nanowires.
Causes of instability in the spectrometric characteristics of CsI:Ti crystals with a matt surface.
Features of the interaction of accelerated C60 ions with the ITO target surface.
Electrical properties of InSe and Bi2Te3 layered single crystals intercalated with C3H8O3.
The use of the structural approach in assessing the effectiveness of gas and ion nitriding steels.
Microwave high-resolution scanning heating in the technology of micro- and nanoelectronics.
Investigation of the characteristics of an image converter in a hyperfine gas-discharge cell with a semiconductor electrode.
The mechanism of wearing of cutting tools based on cBN for precision wear-resistant high-chromium pig-iron.
Electrochemical impedance spectroscopy of current sources Li/Cu4Bi6S11.
Periodic structure in a photosensitive composite film at excitation of the limit TE0 mod of the substrate.
Structural features of mechanisms of deterioration and destruction of materials of balls of drum mills.
Influence of the characteristic size on solid-phase solubility in the Ag-Ge film system.
Stationary regimes of low pressure magnetron discharge.
To the 40th anniversary of the beginning of research in the field of plasma technologies in microelectronics at the Physics and Technology Faculty of the Kharkiv University.
To the 70th anniversary.
Information for authors.
Topic directions.
Вихідні дані.

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