Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons / Vernydub R. M., Kyrylenko O. I., Konoreva O. V., Olikh Ya. M., Litovchenko P. G., Pavlovskyy Yu. V., Potera P., Tartachnyk V. P. (2020)
інтернет-адреса сторінки: http://jnas.nbuv.gov.ua/article/UJRN-0001151471
Semiconductor physics, quantum electronics & optoelectronics    А - 2019 /  Випуск (2020, Vol. 23, № 2)
Vernydub R. M., Kyrylenko O. I., Konoreva O. V., Olikh Ya. M., Litovchenko P. G., Pavlovskyy Yu. V., Potera P., Tartachnyk V. P.
Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons
Cite:
Vernydub, R. M., Kyrylenko, O. I., Konoreva, O. V., Olikh, Ya. M., Litovchenko, P. G., Pavlovskyy, Yu. V., Potera, P., Tartachnyk, V. P. (2020). Electrophysical characteristics of GaAs1-xPx LEDs irradiated by 2 MeV electrons. Semiconductor Physics, Quantum Electronics and Optoelectronics , 23 (2), 201-207. http://jnas.nbuv.gov.ua/article/UJRN-0001151471 | |
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