Semiconductor physics, quantum electronics & optoelectronics. 2012, 15 (3) АРХІВ (Всі випуски) 
 | Semiconductor physics, quantum electronics & optoelectronics
2012. Вип. 3 |
- Title.
- Content.
- Sizov F. F. IR region challenges: Photon or thermal detectors? Outlook and means. - C. 183-199.
- Shapoval O. V., Sauleau R., Nosich A. I. Grating and plasmon resonances in the scattering of light by finite silver nanostrip gratings. - C. 200-203.
- Natarov D. M., Sauleau R., Nosich A. I. Resonance scattering and absorption of light by finite two-period gratings of circular silver nanowires. - C. 204-208.
- Sakhnenko N. K. Complex source point concept in the modelling of dynamic control for optical beam deflection. - C. 209-213.
- Katerynchuk V. M., Kudrynskyi Z. R. Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide. - C. 214-217.
- Baranskii P. I., Gaidar G. P. Peculiariries of thermoannealing in n-Si and n-Ge crystals with oxygen impurity. - C. 218-222.
- Kapush O. A., Kalytchuk S. M., Trishchuk L. I., Tomashyk V. M., Tomashyk Z. F., Kravtsova A. S., Korbutyak D. V., Boruk S. D. The influence of dispersion environment nature on the photoluminescence properties of CdTe nanocrystals in colloidal solutions. - C. 223-226.
- Studenyak I. P., Kranjcec M., Bilanchuk V. V., Dziaugys A. , Bany J., Orliukas A. F. Influence of cation substitution on electrical conductivity and optical absorption edge in Cu7(Ge1-xSix)S5I mixed crystals. - C. 227-231.
- Yukhymchuk V. O., Kostyukevych S. A., Dzhagan V. M., Milekhin A. G., Rodyakina E. E., Yanchuk I. B., Shepeliavy P. Ye., Valakh M. Ya., Kostyukevych K. V., Lysiuk V. O., Tverdokhlib I. V. SERS of Rhodamine 6G on substrates with laterally ordered and random gold nanoislands. - C. 232-238.
- Bacherikov Yu. Yu., Zhuk A. G., Optasyuk S. V., Okhrimenko O. B., Kardashov K. D., Kozitskiy S. V. The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis. - C. 239-246.
- Gavrysh V. I. Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions. - C. 247-251 .
- Karachevtsev A. O. Fourier-Stokes polarimetry of fields corresponding to linearly and circularly polarized birefringent protein networks. - C. 252-260 .
- Novakovs'ka O. Yu. Polarization correlometry of nets for characteristic states in Mueller-matrix patterns inherent to phase-inhomogeneous biological layers. - C. 261-267.
- Nizam R., Mahdi S., Rizvi A., Azam A. Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter. - C. 268-275.
- Akinlami J. O., Bolaji F. M. Complex index of refraction of indium nitride InN. - C. 276-280.
- Akinlami J. O., Olateju I. O. Reflection coefficient and optical conductivity of gallium nitride GaN. - C. 281-284.
- Muminov R. A., Saymbetov A. K., Toshmurodov Yo. K. Electrophysical characteristics of large-size aSi-Si(Li) detector heterostructures. - C. 285-287.
- Aleinikov A. B., Berezovets V. A., Borblik V. L., Shwarts M. M., Shwarts Yu. M. Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown. - C. 288-293.
- Rubish V. M., Kozusenok O. V., Shtets P. P., Marjan V. M., Gera E. V., Tarnaj A. A. Crystallization study of (As2S3)100-x(SbSI)x amorphous filmsby the optical method. - C. 294-297.
- Luchenko A. I., Svezhentsova K. V., Melnichenko M. M. Photoelectrical properties of nanoporous silicon. - C. 298-301.
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