The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures / Ievtukh, V. A., Ulyanov, V. V., Nazarov, A. N. (2016)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000714544
Semiconductor Physics, Quantum Electronics and Optoelectronics    А - 2019 /  Issue (2016, Vol. 19, № 1)
Ievtukh V. A., Ulyanov V. V., Nazarov A. N.
The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures
Cite:
Ievtukh, V. A., Ulyanov, V. V., Nazarov, A. N. (2016). The charge trapping/emission processes in silicon nanocrystalline nonvolatile memory assisted by electric field and elevated temperatures. Semiconductor Physics, Quantum Electronics and Optoelectronics , 19 (1), 116-123. http://jnas.nbuv.gov.ua/article/UJRN-0000714544 | |
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