Behavior of hydrogen during crystallization of thin silicon films doped with tin / Rudenko, R. M., Krasko, M. M., Voitovych, V. V., Kolosiuk, A. H., Povarchuk, V. Yu., Kraichynskyi, A. M., Yukhymchuk, V. O., Voitovych, M. V., Bratus, V. Ya., Zaloilo, I. A. (2013)
Ukrainian

English  Ukrainian Journal of Physics   /     Issue (2013, 58 (12))

Rudenko R. M., Krasko M. M., Voitovych V. V., Kolosiuk A. H., Povarchuk V. Yu., Kraichynskyi A. M., Yukhymchuk V. O., Voitovych M. V., Bratus V. Ya., Zaloilo I. A.
Behavior of hydrogen during crystallization of thin silicon films doped with tin


Cite:
Rudenko, R. M., Krasko, M. M., Voitovych, V. V., Kolosiuk, A. H., Povarchuk, V. Yu., Kraichynskyi, A. M., Yukhymchuk, V. O., Voitovych, M. V., Bratus, V. Ya., Zaloilo, I. A. (2013). Behavior of hydrogen during crystallization of thin silicon films doped with tin. Ukrainian Journal of Physics, 58 (12), 1166-1171. http://jnas.nbuv.gov.ua/article/UJRN-0000725625 [In Ukrainian].

Equation of state for water in the small compressibility region / Bardik, V. Yu., Nerukh, D., Pavlov, E. V., Zhyganiuk, I. V. (2012)
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