Semiconductor physics, quantum electronics & optoelectronics. 2012, 15 (2) АРХІВ (Всі випуски) 
 | Semiconductor physics, quantum electronics & optoelectronics
2012. Вип. 2 |
- Title.
- Content.
- Kryuchenko Yu. V., Sachenko A. V., Bobyl A. V., Kostylyov V. P., Romanets P. N., Sokolovskyi I. O., Shkrebtii A. I., Terukov E. I. Efficiency of a-Si :H solar cell. Detailed theory. - C. 91-116.
- Fediv V. I., Rudko G. Yu., Savchuk A. I., Gule E. G., Voloshchuk A. G. Synthesis route and optical characterization of CdS:Mn / polyvinyl alcohol nanocomposite. - C. 117-123.
- Sorokin V. M., Konakova R. V., Kudryk Ya. Ya., Zinovchuk A. V., Bigun R. I., Kudryk R. Ya., Shynkarenko V. V. Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs. - C. 124-128.
- Boiko I. I. Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum. - C. 129-138.
- Gomeniuk Y. V. Current transport mechanisms in metal - high-k dielectric - silicon structures. - C. 139-146.
- Studenyak I. P., Kranjcec M., Neimet Yu. Yu., Pop M. M. Optical absorption edge in (Ag3AsS3)x(As2S3)1-x superionic glasses. - C. 147-151.
- Paiuk A. P., Stronski A. V., Vuichyk N. V., Gubanova A. A., Krys'kov Ts. A., Oleksenko P. F. Mid-IR impurity absorption in As2S3 chalcogenide glasses doped with transition metals. - C. 152-155.
- Makhanets O. M., Tsiupak N. R., Voitsekhivska O. M. Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range. - C. 156-161.
- Boyko V. G., Zayats N. S. Application of ferroelectrics to create electroluminescent indicators of temperature. - C. 162-165.
- Vlasov S. I., Ovsyannikov A. V., Ismailov B. K., Kuchkarov B. H. Effect of pressure on the properties of Al SiO2 n-Si Ni structures. - C. 166-169.
- Smirnov A. B. Residual stresses and piezoelectric properties of the HgCdTe - based compound heterostructures under anisotropic deformation restriction. - C. 170-175.
- Storozhenko I. P., Yaroshenko A. N., Kaydash M. V. Graded-gap AlInN Gunn diodes. - C. 176-180.
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