Influence of deep-level impurities on the strain electric properties of monocrystalline silicon / Zainabidinov, S., Mamatkarimov, O. O., Khimmatkulov, O., Tursunov, I. G. (2017)
web address of the page http://jnas.nbuv.gov.ua/article/UJRN-0000812102 Ukrainian Journal of Physics А - 2018 / Issue (2017, Т. 62, № 11)
Zainabidinov S., Mamatkarimov O. O., Khimmatkulov O., Tursunov I. G. Influence of deep-level impurities on the strain electric properties of monocrystalline silicon
Cite: Zainabidinov, S., Mamatkarimov, O. O., Khimmatkulov, O., Tursunov, I. G. (2017). Influence of deep-level impurities on the strain electric properties of monocrystalline silicon. Ukrainian Journal of Physics, 62 (11), 951-954. http://jnas.nbuv.gov.ua/article/UJRN-0000812102 | Evaluation of redistribution of hydrogen near a crack-like defect / Stashchuk, M. H. (2016)
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| Materials Science (Physicochemical mechanics of materials) / Issue (2016, 52 (6))
Stashchuk M. H. Evaluation of redistribution of hydrogen near a crack-like defect
Cite: Stashchuk, M. H. (2016). Evaluation of redistribution of hydrogen near a crack-like defect. Materials Science (Physicochemical mechanics of materials), 52 (6), 56-62. http://jnas.nbuv.gov.ua/article/UJRN-0000814119 [In Ukrainian]. |
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