Semiconductor physics, quantum electronics & optoelectronics. 2015, 18 (1) АРХІВ (Всі випуски) 
 | Semiconductor physics, quantum electronics & optoelectronics
2015. Вип. 1 |
- Title.
- Content.
- Korotyeyev V. V. Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer. - C. 1-11.
- Bletskan M. M., Bletskan D. I., Kabatsii V. M. Electronic structure of PbSnS3 and PbGeS3 semiconductor compounds with the mixed cation coordination. - C. 12-19.
- Rudko G. Yu., Kovalenko S. A., Gule E. G., Bobyk V. V., Solomakha V. M., Bogoslovskaya A. B. Zinc oxide nanoparticles fabricated in the porous silica matrix by the sublimation method. - C. 20-25.
- Rozouvan T. S., Poperenko L. V., Shaykevich I. A. Influence of the surface roughness and oxide surface layer onto Si optical constants measured by the ellipsometry technique. - C. 26-30.
- Dmitruk N. L., Borkovskaya O. Yu., Mamykin S. V., Havrylenko T. S., Mamontova I. B., Kotova N. V., Basiuk E. V. Au/GaAs photovoltaic structures with single-wall carbon nanotubes on the microrelief interface. - C. 31-35.
- Rusakov K. I., Parashchuk V. V. Nonlinear - optical processes at streamer discharge in semiconductor. - C. 36-39.
- Golenkov A. G., Zhuravlev K. S., Gumenjuk-Sichevska J. V., Lysiuk I. O., Sizov F. F. Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs. - C. 40-45.
- Strelchuk V. V., Kolomys O. F., Golichenko B. O., Boyko M. I., Kaganovich E. B., Krishchenko I. M., Kravchenko S. O., Lytvyn O. S., Manoilov E. G., Nasieka Iu. M. Micro-Raman study of nanocomposite porous films with silver nanoparticles prepared using pulsed laser deposition. - C. 46-52.
- Gaidar G. P. Changes in electrophysical properties of heavily doped n-Ge single crystals under the influence of thermoannealings. - C. 53-56.
- Makhanets O. M., Kuchak A. I., Gutsul V. I., Voitsekhivska O. M. Spectral parameters of electron in multi-shell open semiconductor nanotube. - C. 57-62.
- Vasin A. V., Ishikawa Y., Rusavsky A. V., Nazarov A. N., Konchitz A. A., Lysenko V. S. Photoluminescent properties of oxidized stochiometric and carbon-rich amorphous Si1-xCx:H films. - C. 63-70.
- Red'ko S. M. Influence of weak magnetic fields treatment on photoluminescence of GaN:Si. - C. 71-73.
- Kovalchuk A. O., Rudko G. Yu., Fediv V. I., Gule E. G. Analysis of conditions for synthesis of CdS:Mn nanoparticles. - C. 74-78.
- Syngayivska G. I., Korotyeyev V. V. Elecron transport in crossed electric and magnetic fields under the condition of the electron streaming in GaN. - C. 79-85.
- Kupchak I. M., Serpak N. F., Strelchuk V. V., Korbutyak D. V. Vibrational states of hexagonal ZnO doped with Co. - C. 86-89.
- Shpotyuk M. V., Vakiv M. M., Shpotyuk O. I., Ubizskii S. B. On the origin of radiation-induced metastability in vitreous chalcogenide semiconductors: The role of intrinsic and impurity-related destruction-polymerization transformations. - C. 90-96.
- Kondratenko S. V. Recombination of charge carriers in heterostructures with Ge nanoislands grown on Si(100). - C. 97-100.
- Bobrenko Yu. N., Pavelets S. Yu., Semikina T. V., Stadnyk O. A., Sheremetova G. I., Yaroshenko M. V. Thin-film solar converters based on the p-Cu1. 8S/n-CdTe surface-barrier structure. - C. 101-105.
- Kozachenko V. V., Kondratenko O. S., Le Normand F. Morphology and optical constants of nanographite films created by thermal vacuum deposition. - C. 106-109.
- Vertsimakha G. V. Peculiarities of the exciton scattering in double semiconductor quantum wells with disordered layers. - C. 110-114.
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