Semiconductor physics, quantum electronics & optoelectronics. 2012, 15 (1)

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Semiconductor Physics, Quantum Electronics and Optoelectronics
2012. Issue 15 (1)

Title.
Content.
Determination of interface state density in high-k dielectric-silicon system from conductance-frequency measurements.
Characteristics of gettering process in multicrystalline Si wafers with combined porous Si/Al getters.
Interface features of SiO2/SiC heterostructures according to methods for producing the SiO2 thin films.
Phase diagrams of Si1-xGex solid solution: a theoretical approach.
Binding energy of excitons in parabolic quantum wells in uniform electric and magnetic fields.
Influence of -irradiation (60So) on the concentration and mobility of carriers in Ge and Si single crystals of n-type.
Peculiarities of valence band formation in As-Ge-Se semiconductor glasses.
Dielectric properties of TlIn(S1-xSex)2 polycrystals near phase transitions.
Investigation of InS-InSe heterojunctions prepared using sulphurization of p-InSe.
Influence of internal parameters on the signal value in optical sensor based on the non-ideal heterostructure CdS-Cu2S.
Experimental and theoretical study of stimulated Raman scattering indicatrix asymmetry.
Ultrafast light-matter interaction in transparent medium .
Carbides of A3B5 compounds - new class materials for opto- and microelectronics.
Effect of nanosize metal overlayer on C60 thin film optical parameters near fundamental absorption edge.
Narrow-gap piezoelectric heterostructure as IR detector.
A novel Al0. 33Ga0. 67As/In0. 15Ga0. 85As/GaAs quantum well Hall device grown on (111) GaAs).
Contribution of f- and g- transitions to electron intervalley scattering of n-Si at temperatures 300 to 450 K.
Interaction between viral particles and structured metal surface under surface plasmon propagation.
Negative dielectric permittivity of nonmagnetic crystals in the terahertz waveband.

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